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參數(shù)資料
| 型號(hào)： | HGTP3N60C3D |
| 廠商： | Harris Corporation |
| 英文描述： | 3.3V 72-mc CPLD |
| 中文描述： | 第6A，600V的，的ufs系列N溝道IGBT的與反平行Hyperfast二極管 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 327K |
| 代理商： | HGTP3N60C3D |
3-13
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
f
M
,
1
2
4
6
100
200
10
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 3.75
o
C/W
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 82
, L = 1mH
V
GE
= 10V
V
GE
= 15V
5
3
V
CE(PK)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
,
0
100
200
300
400
500
600
0
2
4
6
8
T
J
= 150
o
C, V
GE
= 15V, R
G
= 82
, L = 1mH
10
12
14
16
18
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
100
200
300
400
500
C
C
IES
FREQUENCY = 1MHz
C
OES
C
RES
V
G
,
V
C
,
Q
G
, GATE CHARGE (nC)
0
240
120
360
480
600
15
12
9
6
3
0
2
4
6
8
10
12
14
0
V
CE
= 400V
V
CE
= 200V
V
CE
= 600V
I
G
REF = 1.060mA
R
L
= 200
T
C
= 25
o
C
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.05
0.2
0.1
0.02
0.01
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
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| HGTP3N60C3D_07 | 制造商:HARRIS 制造商全稱(chēng):HARRIS 功能描述:6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP5N120 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGTP5N120BN | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs |
| HGTP5N120BND | 功能描述:IGBT 晶體管 21a 1200V IGBT NPT Series N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP5N120CN | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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