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參數(shù)資料
| 型號： | HGTP3N60A4D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 17 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 156K |
| 代理商： | HGTP3N60A4D |
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
64
48
56
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
112
80
96
72
2
1
3
4
5
6
88
104
R
G
= 50
, L = 1mH, V
CE
= 390V
V
GE
= 12V, T
J
= 25
o
C
V
GE
= 15V, T
J
= 25
o
C
V
GE
= 15V, T
J
= 125
o
C
V
GE
= 12V, T
J
= 125
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
48
40
64
80
56
72
88
96
2
1
3
4
5
6
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
I
C
,
0
8
12
4
6
8
10
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
12
16
20
4
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
14
0
4
10
6
8
12
16
4
8
12
16
24
20
28
0
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
I
G(REF)
= 1mA, R
L
= 100
, T
J
= 25
o
C
0
50
100
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
150
125
25
150
250
200
E
T
,
μ
J
R
G
= 50
, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 4.5A
I
CE
= 3A
I
CE
= 1.5A
30
10
100
R
G
, GATE RESISTANCE (
)
100
3
1000
E
T
,
μ
J
1000
I
CE
= 4.5A
I
CE
= 3A
I
CE
= 1.5A
T
J
= 125
o
C, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
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| HGTP3N60A4D9A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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