參數(shù)資料
型號(hào): HGTP3N60A4D
廠商: INTERSIL CORP
元件分類: IGBT 晶體管
英文描述: 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
中文描述: 17 A, 600 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù): 4/10頁
文件大?。?/td> 130K
代理商: HGTP3N60A4D
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
300
6
2
3
600
100
5
4
200
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 1.8
o
C/W, SEE NOTES
T
J
= 125
o
C, R
G
= 50
, L = 1mH, V
CE
= 390V
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
75
o
C
V
GE
15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
15
4
6
14
0
24
40
56
18
13
14
8
10
12
16
8
16
32
48
20
64
V
CE
= 390V, R
G
= 50
, T
J
= 125
o
C
t
SC
I
SC
0
2
3
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
4
8
4
5
16
12
20
1
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
4
8
16
12
20
0
2
3
4
1
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
E
O
,
μ
J
160
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
120
40
200
3
2
4
5
6
01
240
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
120
E
O
,
μ
J
0
20
80
40
100
140
60
3
2
4
5
6
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
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