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參數(shù)資料
| 型號(hào)： | HGTP3N60A4D |
| 廠商： | INTERSIL CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 17 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 130K |
| 代理商： | HGTP3N60A4D |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 3A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 50
,
L = 1mH,
Test Circuit (Figure 24)
-
5.5
8
ns
Current Rise Time
t
rI
-
12
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
110
165
ns
Current Fall Time
t
fI
-
70
100
ns
Turn-On Energy (Note 2)
E
ON1
-
37
-
μ
J
Turn-On Energy (Note 2)
E
ON2
-
90
100
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
50
80
μ
J
Diode Forward Voltage
V
EC
I
EC
= 3A
-
2.25
-
V
Diode Reverse Recovery Time
t
rr
I
EC
= 3A, dI
EC
/dt = 200A/
μ
s
-
29
-
ns
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
-
19
-
ns
Thermal Resistance Junction To Case
R
θ
JC
IGBT
-
-
1.8
o
C/W
Diode
-
-
3.5
o
C/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
4
0
16
8
12
25
75
100
125
150
20
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
12
0
I
C
,
4
300
400
200
100
500
600
0
16
20
8
T
J
= 150
o
C, R
G
= 50
, V
GE
= 15V, L = 200
μ
H
HGT1S3N60A4DS, HGTP3N60A4D
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HGTP3N60A4D9A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP3N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP3N60B3D | 制造商:Harris Corporation 功能描述: |
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| HGTP3N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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