參數(shù)資料
型號： HGTP3N60A4D9A
廠商： Fairchild Semiconductor Corporation
英文描述： 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
中文描述： 600V的，開關(guān)電源系列N溝道IGBT的與反平行Hyperfast二極管
文件頁數(shù)： 6/10頁
文件大?。?/td> 156K
代理商： HGTP3N60A4D9A
6
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
20
40
60
80
100
0
200
400
500
700
300
600
100
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
2.0
10
12
2.1
2.4
2.2
14
16
2.6
2.7
V
C
,
2.3
2.5
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250
μ
s,
I
CE
= 4.5A
I
CE
= 1.5A
I
CE
= 3A
t
1
, RECTANGULAR PULSE DURATION (s)
Z
q
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
t
1
t
2
P
D
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
qJC
X R
qJC
) + T
C
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
相關(guān)PDF資料
PDF描述
HGTP3N60B3D 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S3N60B3DS 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP5N120 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
HGTP5N120CNS TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB
HGTP5N120CNS9A TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP3N60B3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP3N60B3D 制造商:Harris Corporation 功能描述:
HGTP3N60B3R4724 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP3N60C3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP3N60C3D 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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