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參數(shù)資料
| 型號： | HGTP2N120CN_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 13A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 13 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 498K |
| 代理商： | HGTP2N120CN_NL |
4
www.fairchildsemi.com
HGTP2N120CN, HGT1S2N120CN Rev. C
HG
TP2
N
1
20
CN,
HG
T1
S
2N1
2
0CN
1
3A,
12
0
0V
,NP
T
S
eries
N-Cha
nne
lIGBT
Typical Performance Characteristics
Figure 1. DC Collector Current vs
Figure 2. Minimum Switching Safe Operating
Case Temperature
Area
Figure 3. Operating Frequency vs Collector to
Figure 4. Short Circuit Withstand Time
Emitter Currentl
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
TC, CASE TEMPERATURE (oC)
I CE
,D
C
CO
LLECT
OR
CURREN
T
(A)
50
0
25
75
100
125
150
2
10
VGE = 15V
12
14
8
6
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
10
0
I CE
,CO
LLECT
OR
T
O
EM
ITTER
CURR
ENT
(A)
4
6
600
800
400
200
1000
1200
0
12
14
8
2
TJ = 150oC, RG = 51, VGE = 15V, L = 5mH
16
f MAX
,OPERA
TING
FREQUEN
CY
(kHz)
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
5
50
100
200
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RJC = 1.2oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TC
VGE
12V
15V
110oC
TJ = 150oC, RG = 51, VGE = 15V, L = 5mH
13
4
2
IDEAL DIODE
TC = 75oC,VGE = 15V
TC VGE
75oC 12V
75oC 15V
VGE, GATE TO EMITTER VOLTAGE (V)
I SC
,P
E
AK
SH
ORT
C
IRCU
IT
C
URRENT
(A
)
t SC
,SHORT
CI
RC
UI
T
WITHST
AND
TI
ME
(
s)
20
30
40
50
10
0
20
30
40
50
10
0
10
14
15
13
12
11
VCE = 840V, RG = 51, TJ = 125oC
ISC
tSC
01
2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
I CE
,COLLECT
OR
T
O
EMI
TTER
CUR
RENT
(A)
0
2
4
345
10
8
6
TC = 25oC
TC = 150oC
250
S PULSE TEST
DUTY CYCLE <0.5%, VGE = 12V
TC = -55oC
6
I CE
,COLLECT
OR
T
O
EMITTER
CU
RRENT
(
A
)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2
4
6
012
345
8
0
10
TC = 25oC
TC = 150oC
TC = -55oC
DUTY CYCLE <0.5%, VGE = 15V
250
s PULSE TEST
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相關(guān)代理商/技術(shù)參數(shù) |
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| HGTP2N120CNS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:13A, 1200V, NPT Series N-Channel IGBT |
| HGTP3N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT NPT Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP3N60A4_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTP3N60A4D | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP3N60A4D9A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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