- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371810 > HGTP15N50C1 (HARRIS SEMICONDUCTOR) 15A, 20A, 400V and 500V N-Channel IGBTs PDF資料下載
參數(shù)資料
| 型號： | HGTP15N50C1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 15A, 20A, 400V and 500V N-Channel IGBTs |
| 中文描述： | 15 A, 500 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 35K |
| 代理商： | HGTP15N50C1 |
3-62
Specifications HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
HGTH20N40C1, E1,
HGTP15N40C1, E1
HGTH20N50C1, E1,
HGTP15N50C1, E1
MIN
MAX
MIN
MAX
Collector-Emitter Breakdown
Voltage
BV
CES
I
C
= 1mA, V
GE
= 0
400
-
500
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2.0
4.5
2.0
4.5
V
Zero-Gate Voltage Collector
Current
I
CES
V
CE
= 400V, T
C
= +25
o
C
-
250
-
-
μ
A
V
CE
= 500V, T
C
= +25
o
C
-
-
-
250
μ
A
V
CE
= 400V, T
C
= +125
o
C
-
1000
-
-
μ
A
V
CE
= 500V, T
C
= +125
o
C
-
-
-
1000
μ
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V, V
CE
= 0
-
100
-
100
nA
Reverse Collector-Emitter
Leakage Current
I
CE
R
GE
= 0
, V
EC
= 5V
-
-5
-
-5
mA
Collector-Emitter on Voltage
V
CE(ON)
I
C
= 20A, V
GE
= 10V
-
2.5
-
2.5
V
I
C
= 35A, V
GE
= 20V
-
3.2
-
3.2
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 10A, V
CE
= 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
Q
G(ON)
I
C
= 10A, V
CE
= 10V
-
33 (Typ)
-
33 (Typ)
nC
Turn-On Delay Time
t
D(ON)I
I
C
= 20A, V
CE(CLP)
= 300V,
L = 25
μ
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 25
-
50
-
50
ns
Rise Time
t
RI
-
50
-
50
ns
Turn-Off Delay Time
t
D(OFF)I
-
400
-
400
ns
Fall Time
t
FI
40E1, 50E1
680 (Typ)
1000
680 (Typ)
1000
ns
40C1, 50C1
400
500
400
500
ns
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
W
OFF
x Frequency)
W
OFF
I
C
= 10A, V
CE(CLP)
= 300V,
L = 25
μ
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 25
40E1, 50E1
1810 (Typ)
μ
J
40C1, 50C1
1070 (Typ)
μ
J
Thermal Resistance
Junction-to-Case
R
θ
JC
HGTH, HGTM
-
1.25
-
1.25
o
C/W
HGTP
-
1.67
-
1.67
o
C/W
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
相關PDF資料 |
PDF描述 |
|---|---|
| HGTH20N40E1 | 15A, 20A, 400V and 500V N-Channel IGBTs |
| HGTH20N50C1 | 15A, 20A, 400V and 500V N-Channel IGBTs |
| HGTH20N50E1 | 15A, 20A, 400V and 500V N-Channel IGBTs |
| HGTP15N40C1 | 15A, 20A, 400V and 500V N-Channel IGBTs |
| HGTP15N40E1 | 15A, 20A, 400V and 500V N-Channel IGBTs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP15N50E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP1N120BN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT |
| HGTP1N120BND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP1N120CN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT |
| HGTP1N120CND | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
發(fā)布緊急采購，3分鐘左右您將得到回復。