參數(shù)資料
型號(hào)： HGTH20N50C1
廠商： HARRIS SEMICONDUCTOR
元件分類： IGBT 晶體管
英文描述： 15A, 20A, 400V and 500V N-Channel IGBTs
中文描述： 20 A, 500 V, N-CHANNEL IGBT, TO-218AC
文件頁數(shù)： 1/5頁
文件大?。?/td> 35K
代理商： HGTH20N50C1
3-61
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HGTP15N40C1, 40E1, 50C1, 50E1,
HGTH20N40C1, 40E1, 50C1, 50E1
15A, 20A,
400V and 500V N-Channel IGBTs
Features
15A and 20A, 400V and 500V
V
CE(ON)
2.5V
T
FI
1
μ
s, 0.5
μ
s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
No Anti-Parallel Diode
Applications
Power Supplies
Motor Drives
Protection Circuits
Description
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1,
HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH20N40C1
TO-218AC
G20N40C1
HGTH20N40E1
TO-218AC
G20N40E1
HGTH20N50C1
TO-218AC
G20N50C1
HGTH20N50E1
TO-218AC
G20N50E1
HGTP15N40C1
TO-220AB
G15N40C1
HGTP15N40E1
TO-220AB
G15N40E1
HGTP15N50C1
TO-220AB
G15N50C1
HGTP15N50E1
TO-220AB
G15N50E1
NOTE: When ordering, use the entire part number.
April 1995
Packages
HGTH-TYPES JEDEC TO-218AC
HGTP-TYPES JEDEC TO-220AB
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
GATE
COLLECTOR
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
GATE
COLLECTOR
EMITTER
C
E
G
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTH20N40C1
HGTH20N40E1
400
400
-5
±
20
20
35
100
0.8
-55 to +150
HGTH20N50C1
HGTH20N50E1
500
500
-5
±
20
20
35
100
0.8
-55 to +150
HGTP15N40C1
HGTP15N40E1
400
400
-5
±
20
15
35
75
0.6
-55 to +150
HGTP15N50C1
HGTP15N50E1
500
500
-5
±
20
15
35
75
0.6
-55 to +150
UNITS
V
V
V
V
A
A
W
W/
o
C
o
C
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V
CES
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . V
CGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . V
CES
(rev.)
Gate-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . I
C
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Power Dissipation at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range. . . T
J
, T
STG
File Number
2174.3
相關(guān)PDF資料
PDF描述
HGTH20N50E1 15A, 20A, 400V and 500V N-Channel IGBTs
HGTP15N40C1 15A, 20A, 400V and 500V N-Channel IGBTs
HGTP15N40E1 15A, 20A, 400V and 500V N-Channel IGBTs
HGTP15N50E1 15A, 20A, 400V and 500V N-Channel IGBTs
HGTH20N40C1 CAP 0.033UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTH20N50C1D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTH20N50E1 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTH20N50E1D 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTH20N50EID 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTH32N60E2 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
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