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參數(shù)資料
| 型號(hào)： | HGTP12N60C3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | XC9572-10PCG44C |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 131K |
| 代理商： | HGTP12N60C3 |
3-31
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
C
,
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
4
6
8
10
12
0
10
20
40
50
60
70
14
30
80
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -40
o
C
I
C
,
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
0
0
2
4
6
8
10
10
20
30
12.0V
8.5V
9.0V
8.0V
7.5V
7.0V
V
GE
= 15.0V
40
50
60
70
80
10.0V
I
C
,
0
30
0
1
2
3
4
5
40
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
10
20
50
70
80
60
I
C
,
0
30
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
10
20
40
50
60
70
80
25
50
75
100
125
150
0
5
10
15
20
25
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
I
S
,
20
60
80
120
t
S
,
μ
s
10
11
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
12
14
15
13
140
100
40
I
SC
t
SC
5
10
15
20
V
CE
= 360V, R
GE
= 25
, T
J
= 125
o
C
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
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