參數(shù)資料
型號： HGTP12N60C3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： XC9572-10PCG44C
中文描述： 24 A, 600 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù)： 2/6頁
文件大小： 131K
代理商： HGTP12N60C3
3-30
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP12N60C3, HGT1S12N60C3,
HGT1S12N60C3S
600
UNITS
V
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
GE
= 25
.
24
12
96
±
20
±
30
A
A
A
V
V
24A at 600V
104
0.83
100
-40 to 150
260
4
13
W
W/
o
C
mJ
o
C
o
C
μ
s
μ
s
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Emitter-Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
24
30
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
-
-
250
μ
A
V
CE
= BV
CES
-
-
1.0
mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
-
1.65
2.0
V
-
1.85
2.2
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A,
V
CE
= V
GE
3.0
5.0
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
T
J
= 150
o
C
R
G
= 25
V
GE
= 15V
L = 100
μ
H
-
-
±
100
nA
Switching SOA
SSOA
V
CE(PK)
= 480V
80
-
-
A
V
CE(PK)
= 600V
24
-
-
A
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
7.6
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
48
55
nC
V
GE
= 20V
-
62
71
nC
Current Turn-On Delay Time
t
D(ON)I
T
J
= 150
o
C,
I
CE
= I
C110,
V
CE(PK)
= 0.8 BV
CES,
V
GE
= 15V,
R
G
= 25
,
L = 100
μ
H
-
14
-
ns
Current Rise Time
t
RI
-
16
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
-
270
400
ns
Current Fall Time
t
FI
-
210
275
ns
Turn-On Energy
E
ON
-
380
-
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
900
-
μ
J
Thermal Resistance
R
θ
JC
-
-
1.2
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S were
tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the
true total Turn-Off Energy Loss. Turn-On losses include diode losses.
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
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