參數(shù)資料
型號(hào)： HGTP10N50C1
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 10A, 12A, 400V and 500V N-Channel IGBTs
中文描述： 10 A, 500 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù)： 2/7頁
文件大小： 38K
代理商： HGTP10N50C1
3-16
Specifications HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
HGTH12N40C1, E1,
HGTP10N40C1, E1
HGTH12N50C1, E1,
HGTP10N50C1, E1
MIN
MAX
MIN
MAX
Collector-Emitter Breakdown
Voltage
BV
CES
I
C
= 1mA, V
GE
= 0
400
-
500
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2.0
4.5
3 (Typ)
2.0
4.5
3 (Typ)
V
Zero Gate Voltage Collector
Current
I
CES
V
CE
= 400V, T
C
= +25
o
C
-
250
-
-
μ
A
V
CE
= 500V, T
C
= +25
o
C
-
-
-
250
μ
A
V
CE
= 400V, T
C
= +125
o
C
-
1000
-
-
μ
A
V
CE
= 500V, T
C
= +125
o
C
-
-
-
1000
μ
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V, V
CE
= 0
-
100
-
100
nA
Collector-Emitter on Voltage
V
CE(ON)
I
C
= 10A, V
GE
= 10V
-
2.5
-
2.5
V
I
C
= 17.5A, V
GE
= 20V
-
3.2
-
3.2
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 5A, V
CE
= 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
Q
G(ON)
I
C
= 5A, V
CE
= 10V
-
19 (Typ)
-
19 (Typ)
nC
Turn-On Delay Time
t
D(ON)I
I
C
= 10A, V
CE(CLP)
= 300V,
L = 50
μ
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 50
-
50
-
50
ns
Rise Time
t
RI
-
50
-
50
ns
Turn-Off Delay Time
t
D(OFF)I
-
400
-
400
ns
Fall Time
t
FI
40E1, 50E1
680 (Typ)
1000
680 (Typ)
1000
ns
40C1, 50C1
400
500
400
500
ns
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
W
OFF
x Frequency)
W
OFF
I
C
= 10A, V
CE(CLP)
= 300V,
L = 50
μ
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 50
40E1, 50E1
680 (Typ)
μ
J
40C1, 50C1
400 (Typ)
μ
J
Thermal Resistance
Junction-to-Case
R
θ
JC
HGTH, HGTM
-
1.67
-
1.67
o
C/W
HGTP
-
2.083
-
2.083
o
C/W
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
相關(guān)PDF資料
PDF描述
HGTP10N50E1 10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N40C1 CAP 0.01UF 100V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
HGTH20N40E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTH20N50C1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP10N50C1D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10N50E1 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP10N50E1D 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTP10N50F1D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10W40C1 制造商:Harris Corporation 功能描述:
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