參數(shù)資料
型號： HGTH20N50E1D
廠商： HARRIS SEMICONDUCTOR
元件分類： IGBT 晶體管
英文描述： 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
中文描述： 20 A, 500 V, N-CHANNEL IGBT, TO-218AC
文件頁數(shù)： 1/6頁
文件大?。?/td> 35K
代理商： HGTH20N50E1D
3-76
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
Features
20A, 400V and 500V
V
CE(ON)
2.5V Max.
T
FALL
1
μ
s, 0.5
μ
s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
Anti-Parallel Diode
Applications
Power Supplies
Motor Drives
Protective Circuits
Description
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D,
and HGTH20N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching
regulators and motor drivers. They feature a discrete anti-
parallel diode that shunts current around the IGBT in the
reverse direction without introducing carriers into the
low power integrated circuits.
April 1995
Package
JEDEC TO-218AC
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH20N40C1D
TO-218AC
G20N40C1D
HGTH20N40E1D
TO-218AC
G20N40E1D
HGTH20N50C1D
TO-218AC
G20N50C1D
HGTH20N50E1D
TO-218AC
G20N50E1D
NOTE: When ordering, use the entire part number.
GATE
COLLECTOR
EMITTER
COLLECTOR
(FLANGE)
C
G
E
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTH20N40C1D
HGTH20N40E1D
400
400
±
20
20
35
35
20
100
0.8
-55 to +150
HGTH20N50C1D
HGTH20N50E1D
500
500
±
20
20
35
35
20
100
0.8
-55 to +150
UNITS
V
V
V
A
A
A
A
W
W/
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
CGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
Diode Forward Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . I
F25
at T
J
= +90
o
C. . . . . . . . . . . . . . . . . . . . . . I
F90
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T
J
, T
STG
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
HGTH20N40C1D, HGTH20N40E1D,
HGTH20N50C1D, HGTH20N50E1D
20A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
File Number
2271.4
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