參數(shù)資料
型號： HGTH20N50E1D
廠商： HARRIS SEMICONDUCTOR
元件分類： IGBT 晶體管
英文描述： 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
中文描述： 20 A, 500 V, N-CHANNEL IGBT, TO-218AC
文件頁數(shù)： 2/6頁
文件大?。?/td> 35K
代理商： HGTH20N50E1D
3-77
Specifications HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
HGTH20N40C1D,
HGTH20N40E1D
HGTH20N50C1D,
HGTH20N50E1D
MIN
MAX
MIN
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 1mA, V
GE
= 0
400
-
500
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2.0
4.5
2.0
4.5
V
Zero Gate Voltage Collector Current
I
CES
V
CE
= 400V, T
C
= +25
o
C
-
250
-
-
μ
A
V
CE
= 500V, T
C
= +25
o
C
-
-
-
250
μ
A
V
CE
= 400V, T
C
= +125
o
C
-
1000
-
-
μ
A
V
CE
= 500V, T
C
= +125
o
C
-
-
-
1000
μ
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V, V
CE
= 0
-
100
-
100
nA
Collector-Emitter On Voltage
V
CE(ON)
I
C
= 20A, V
GE
= 10V
-
2.5
-
2.5
V
I
C
= 35A, V
GE
= 20V
-
3.2
-
3.2
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 10A, V
CE
= 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
Q
G(ON)
I
C
= 10A, V
CE
= 10V
-
33 (Typ)
-
33 (Typ)
nC
Turn-On Delay Time
t
D(ON)I
I
C
= 20A, V
CE(CLP)
= 300V,
L = 25
μ
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 25
-
50
-
50
ns
Rise Time
t
RI
-
50
-
50
ns
Turn-Off Delay Time
t
D(OFF)I
-
400
-
400
ns
Fall Time
t
FI
40E1D, 50E1D
680
(Typ)
1000
680
(Typ)
1000
ns
40C1D, 50C1D
400
(Typ)
500
400
(Typ)
500
ns
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation = W
OFF
x
Frequency)
W
OFF
I
C
= 20A, V
CE(CLP)
= 300V,
L = 25
μ
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 25
40E1D, 50E1D
1810 (Typ)
μ
J
40C1D, 50C1D
1070 (Typ)
μ
J
Thermal Resistance Junction-to-Case
R
θ
JC
-
1.25
-
1.25
o
C/W
Diode Forward Voltage
V
EC
I
EC
= 20A
-
2
-
2
V
Diode Reverse Recovery Time
t
RR
I
EC
= 20A, dI
EC
/dt = 100A/
μ
s
-
100
-
100
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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HGTP10N120BN 功能描述:IGBT 晶體管 35A 1200V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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