- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371810 > HGTP10N40C1 (HARRIS SEMICONDUCTOR) CAP 0.01UF 100V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 PDF資料下載
參數(shù)資料
| 型號： | HGTP10N40C1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | CAP 0.01UF 100V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
| 中文描述： | 10 A, 400 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 38K |
| 代理商： | HGTP10N40C1 |
3-16
Specifications HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
HGTH12N40C1, E1,
HGTP10N40C1, E1
HGTH12N50C1, E1,
HGTP10N50C1, E1
MIN
MAX
MIN
MAX
Collector-Emitter Breakdown
Voltage
BV
CES
I
C
= 1mA, V
GE
= 0
400
-
500
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2.0
4.5
3 (Typ)
2.0
4.5
3 (Typ)
V
Zero Gate Voltage Collector
Current
I
CES
V
CE
= 400V, T
C
= +25
o
C
-
250
-
-
μ
A
V
CE
= 500V, T
C
= +25
o
C
-
-
-
250
μ
A
V
CE
= 400V, T
C
= +125
o
C
-
1000
-
-
μ
A
V
CE
= 500V, T
C
= +125
o
C
-
-
-
1000
μ
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V, V
CE
= 0
-
100
-
100
nA
Collector-Emitter on Voltage
V
CE(ON)
I
C
= 10A, V
GE
= 10V
-
2.5
-
2.5
V
I
C
= 17.5A, V
GE
= 20V
-
3.2
-
3.2
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 5A, V
CE
= 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
Q
G(ON)
I
C
= 5A, V
CE
= 10V
-
19 (Typ)
-
19 (Typ)
nC
Turn-On Delay Time
t
D(ON)I
I
C
= 10A, V
CE(CLP)
= 300V,
L = 50
μ
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 50
-
50
-
50
ns
Rise Time
t
RI
-
50
-
50
ns
Turn-Off Delay Time
t
D(OFF)I
-
400
-
400
ns
Fall Time
t
FI
40E1, 50E1
680 (Typ)
1000
680 (Typ)
1000
ns
40C1, 50C1
400
500
400
500
ns
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
W
OFF
x Frequency)
W
OFF
I
C
= 10A, V
CE(CLP)
= 300V,
L = 50
μ
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 50
40E1, 50E1
680 (Typ)
μ
J
40C1, 50C1
400 (Typ)
μ
J
Thermal Resistance
Junction-to-Case
R
θ
JC
HGTH, HGTM
-
1.67
-
1.67
o
C/W
HGTP
-
2.083
-
2.083
o
C/W
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTH20N40E1D | 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| HGTH20N50C1D | 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| HGTH20N50E1D | 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| HGTH20N40C1D | CAP 0.056UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
| HGTP11N120CN | 43A, 1200V, NPT Series N-Channel IGBT(43A, 1200V NPT系列N溝道絕緣柵雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP10N40C1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N40E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N40E1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP10N40EID | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP10N40F1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。