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參數(shù)資料
| 型號(hào)： | HGTH20N50C1D |
| 廠(chǎng)商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| 中文描述： | 20 A, 500 V, N-CHANNEL IGBT, TO-218AC |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 35K |
| 代理商： | HGTH20N50C1D |
3-79
HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 8. TYPICAL V
CE(ON)
vs TEMPERATURE
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 11. TYPICAL FALL TIME (I
C
= 10A)
FIGURE 12. TYPICAL FALL TIME (I
C
= 20A)
Typical Performance Curves
(Continued)
2700
2250
1800
1350
900
450
C
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 0.1MHz
CISS
COSS
CRSS
3.00
2.75
2.50
2.25
2.00
1.75
1.50
V
C
,
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
I
C
= 10A, V
GE
= 15V
I
C
= 10A, V
GE
= 10V
I
C
= 20A, V
GE
= 15V
I
C
= 20A, V
GE
= 10V
400
300
200
100
0
t
D
,
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
I
C
= 20A, V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
μ
H, R
G
= 25
V
GE
V
CE
I
C
W
OFF
=
∫
I
C
*
V
CE
dt
800
700
600
500
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
t
F
,
I
C
= 10A, V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
μ
H, R
G
= 25
40C1D/50C1D
40E1D/50E1D
800
700
600
500
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
t
F
,
I
C
= 20A, V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
μ
H, R
G
= 25
40C1D/50C1D
40E1D/50E1D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTH20N50E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTH20N50E1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTH20N50EID | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTH32N60E2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTIE50N60E2HB | 制造商:Harris Corporation 功能描述: |
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