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參數(shù)資料
| 型號： | HGTH12N50E1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 10A, 12A, 400V and 500V N-Channel IGBTs |
| 中文描述： | 12 A, 500 V, N-CHANNEL IGBT, TO-218AC |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 38K |
| 代理商： | HGTH12N50E1 |
3-19
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
FIGURE 13. TYPICAL FALL TIME (I
C
= 10A)
FIGURE 14. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS
AT CONSTANT GATE CURRENT
Test Circuit
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
t
F
,
I
C
= 10A, V
GE
= 10V, V
CL
= 300V
L = 50
μ
H, R
G
= 50
40C1/50C1
40E1/50E1
1000
900
800
700
600
500
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
5A, 40C1/50C1
5A, 40E1/50E1
10A, 40C1/50C1
10A, 40E1/50E1
V
GE
= 10V, V
CL
= 300V
L = 50
μ
H, R
G
= 50
W
O
,
μ
J
500
375
250
125
0
V
C
,
V
G
,
10
4
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
GATE-
EMITTER
VOLTAGE
R
L
= 50
I
G(REF)
= 0.38mA
V
GE
= 10V
COLLECTOR-EMITTER VOLTAGE
V
CC
= 0.25 BV
CES
V
CC
= BV
CES
8
6
2
BV
CES
NOTE:
FOR TURN-OFF GATE CURRENTS IN
EXCESS OF 3mA. V
TURN-OFF IS
NOT ACCURATELY REPRESENTED
BY THIS NORMALIZATION.
20V
0V
R
GEN
= 100
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 100
L = 50
μ
H
V
CE(CLP)
=
300V
R
L
= 13
V
CC
130V
相關PDF資料 |
PDF描述 |
|---|---|
| HGTH12N40C1 | 10A, 12A, 400V and 500V N-Channel IGBTs |
| HGTH12N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs |
| HGTP10N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs |
| HGTP10N50C1 | 10A, 12A, 400V and 500V N-Channel IGBTs |
| HGTP10N50E1 | 10A, 12A, 400V and 500V N-Channel IGBTs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGTH12N50EID | 制造商:Harris Corporation 功能描述: |
| HGTH20N40C1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTH20N40C1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTH20N40E1 | 制造商:Harris Corporation 功能描述: |
| HGTH20N40E1D | 制造商:Harris Corporation 功能描述: |
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