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參數(shù)資料
| 型號： | HGTH12N40C1 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10A, 12A, 400V and 500V N-Channel IGBTs |
| 中文描述： | 12 A, 400 V, N-CHANNEL IGBT, TO-218AC |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 38K |
| 代理商： | HGTH12N40C1 |
3-15
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HGTP10N40C1, 40E1, 50C1, 50E1,
HGTH12N40C1, 40E1, 50C1, 50E1
10A, 12A,
400V and 500V N-Channel IGBTs
Features
10A and 12A, 400V and 500V
V
CE(ON)
: 2.5V Max.
T
FI
: 1
μ
s, 0.5
μ
s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
No Anti-Parallel Diode
Applications
Power Supplies
Motor Drives
Protection Circuits
Description
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1,
HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH12N40C1
TO-218AC
G12N40C1
HGTH12N40E1
TO-218AC
G12N40E1
HGTH12N50C1
TO-218AC
G12N50C1
HGTH12N50E1
TO-218AC
G12N50E1
HGTP10N40C1
TO-220AB
G10N40C1
HGTP10N40E1
TO-220AB
G10N40E1
HGTP10N50C1
TO-220AB
G10N50C1
HGTP10N50E1
TO-220AB
G10N50E1
NOTE: When ordering, use the entire part number.
April 1995
Packages
HGTH-TYPES JEDEC TO-218AC
HGTP-TYPES JEDEC TO-220AB
GATE
COLLECTOR
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
GATE
COLLECTOR
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
E
G
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTH12N40C1
HGTH12N40E1
400
400
15
±
20
12
17.5
75
0.6
-55 to +150
HGTH12N50C1
HGTH12N50E1
500
500
15
±
20
12
17.5
75
0.6
-55 to +150
HGTP10N40C1
HGTP10N40E1
400
400
-5
±
20
10
17.5
60
0.48
-55 to +150
HGTP10N50C1
HGTP10N50E1
500
500
-5
±
20
10
17.5
60
0.48
-55 to +150
UNITS
V
V
V
V
A
A
W
W/
o
C
o
C
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V
CES
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . V
CGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . V
ECS
(rev.)
Gate-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . I
C
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Power Dissipation at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating Above T
C
> +25
o
C . . . . . . . . . . .
Operating and Storage Junction Temperature Range. . . T
J
, T
STG
File Number
1697.3
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| HGTH12N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs |
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| HGTP10N50C1 | 10A, 12A, 400V and 500V N-Channel IGBTs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTH12N40C1D | 制造商:Harris Corporation 功能描述: |
| HGTH12N40CID | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTH12N40E1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, 12A, 400V and 500V N-Channel IGBTs |
| HGTH12N40E1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTH12N40EID | 制造商:Harris Corporation 功能描述: |
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