參數(shù)資料
型號(hào)： HGTH12N40E1
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 10A, 12A, 400V and 500V N-Channel IGBTs
中文描述： 12 A, 400 V, N-CHANNEL IGBT, TO-218AC
文件頁(yè)數(shù)： 4/7頁(yè)
文件大小： 38K
代理商： HGTH12N40E1
3-18
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
FIGURE 7. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
FIGURE 8. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 9. TYPICAL V
CE(ON)
vs TEMPERATURE
FIGURE 10. TYPICAL TURN-OFF DELAY TIME
FIGURE 11. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 12. TYPICAL FALL TIME (I
C
= 5A)
Typical Performance Curves
(Continued)
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0
1
2
3
4
I
C
,
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE TEST, V
GE
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
+25
o
C
1000
800
600
400
200
0
C
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 1MHz
CISS
COSS
CRSS
1200
3.00
2.75
2.50
2.25
2.00
1.75
1.50
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
V
C
,
I
C
= 5A, V
GE
= 15V
I
C
= 5A, V
GE
= 10V
I
C
= 10A, V
GE
= 15V
I
C
= 10A, V
GE
= 10V
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
t
D
,
I
C
= 10A, V
GE
= 10V, V
CL
= 300V
L = 50
μ
H, R
G
= 50
V
GE
V
CE
I
C
E
OFF
=
∫
I
C
*
V
CE
dt
800
700
600
500
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
t
F
,
I
C
= 5A, V
GE
= 10V, V
CL
= 300V
L = 50
μ
H, R
G
= 50
40C1/50C1
40E1/50E1
相關(guān)PDF資料
PDF描述
HGTP10N40E1 10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N50C1 10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N50E1 10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N40C1 CAP 0.01UF 100V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
HGTH20N40E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTH12N40E1D 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTH12N40EID 制造商:Harris Corporation 功能描述:
HGTH12N50C1 制造商:Harris Corporation 功能描述:
HGTH12N50C1D 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTH12N50CID 制造商:Rochester Electronics LLC 功能描述:- Bulk
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