參數(shù)資料
型號(hào): HGTH12N40E1
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 10A, 12A, 400V and 500V N-Channel IGBTs
中文描述: 12 A, 400 V, N-CHANNEL IGBT, TO-218AC
文件頁數(shù): 3/7頁
文件大?。?/td> 38K
代理商: HGTH12N40E1
3-17
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. R
G
= 50
,
V
GE
= 0V ARE THE MIN. ALLOWABLE VALUES
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERAT-
ING CURVE
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-
AGE vs JUNCTION TEMPERATURE
FIGURE 4. NORMALIZED THERMAL RESPONSE CHARAC-
TERISTICS
FIGURE 5. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 6. TYPICAL SATURATION CHARACTERISTICS
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
-75
-50
-25
T
D
, JUNCTION TEMPERATURE (
o
C)
0
+25
+50
+75 +100 +125 +150 +175
I
C
,
V
GE
= 10V, R
GEN
= R
GE
= 100
100
80
60
40
20
0
+25
+50
T
C
, CASE TEMPERATURE (
o
C)
+75
+100
+125
+150
R
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
+50
+100
+150
N
V
GE
= V
CE
, I
C
= 1mA
r
I
10
1.0
0.1
0.01
0.01
0.1
1.0
10
100
1000
t, TIME (ms)
Z
θ
(t) = r(t)R
θ
,
D CURVES APPLY FOR POWER PULSE,
TRAIN SHOWN READ TIME AT t1,
T
J(PEAK)
- T
C
= P
(PEAK)
Z
θ
JC
(t)
D = 0.05
SINGLE PULSE
D = 0.5
D = 0.2
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0
2.5
5.0
7.5
10.0
I
C
,
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE TEST, V
CE
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
-40
o
C
+25
o
C
+125
o
C
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0
1
2
3
4
5
I
C
,
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
= 20V
V
GE
= 10V
V
GE
= 8V
V
GE
= 7V
V
GE
= 6V
V
GE
= 5V
V
GE
= 4V
T
C
= +25
o
C
相關(guān)PDF資料
PDF描述
HGTP10N40E1 10A, 12A, 400V and 500V N-Channel IGBTs
HGTP10N50C1 10A, 12A, 400V and 500V N-Channel IGBTs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTH12N40E1D 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTH12N40EID 制造商:Harris Corporation 功能描述:
HGTH12N50C1 制造商:Harris Corporation 功能描述:
HGTH12N50C1D 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTH12N50CID 制造商:Rochester Electronics LLC 功能描述:- Bulk