參數(shù)資料
型號： HGTG5N120BND
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管)
中文描述： 21 A, 1200 V, N-CHANNEL IGBT, TO-247
文件頁數(shù)： 2/7頁
文件大?。?/td> 89K
代理商： HGTG5N120BND
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG5N120BND
HGTP5N120BND
HGT1S5N120BNDS
1200
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
21
10
40
±
20
±
30
A
A
A
V
V
30A at 1200V
167
1.33
-55 to 150
W
W/
o
C
o
C
300
260
8
15
o
C
o
C
μ
s
μ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
1200
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
-
-
250
μ
A
-
100
-
μ
A
-
-
1.5
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 5A,
V
GE
= 15V
-
2.45
2.7
V
-
3.7
4.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 45
μ
A, V
CE
= V
GE
6.0
6.8
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 25
,
V
GE
= 15V,
L = 5mH, V
CE(PK)
= 1200V
-
-
±
250
nA
Switching SOA
SSOA
30
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 5A, V
CE
= 0.5 BV
CES
-
10.5
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 5A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
53
65
nC
V
GE
= 20V
-
60
72
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 5A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 25
,
L = 5mH,
Test Circuit (Figure 20)
-
22
25
ns
Current Rise Time
t
rI
-
15
20
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
160
180
ns
Current Fall Time
t
fI
-
130
160
ns
Turn-On Energy
E
ON
-
450
600
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
390
450
μ
J
HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
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