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參數(shù)資料
| 型號： | HGTD8P50G1S |
| 廠商： | INTERSIL CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 8A, 500V P-Channel IGBTs |
| 中文描述： | 12 A, 500 V, P-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 110K |
| 代理商： | HGTD8P50G1S |
4
HGTD8P50G1, HGTD8P50G1S
FIGURE 7. SATURATION VOLTAGE AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 9. TURN-OFF DELAY AS A FUNCTION OF COLLECTOR-
EMITTER CURRENT
FIGURE 10. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT AND VOLTAGE
FIGURE 11. FALL TIME AS A FUNCTION OF COLLECTOR-
EMITTER CURRENT
FIGURE 12. LATCHING CURRENT AS A FUNCTION OF
SNUBBER CAPACITANCE
Typical Performance Curves
(Continued)
T
J
= +150
o
C
V
C
,
-1
-5
-10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
0
-2
-4
-6
-8
-10
-12
-14
V
GE
= -10V
V
GE
= -15V
T
J
= +150
o
C, R
G
= 25
,
L = 100
μ
H
0.1
1.0
10
W
O
,
-1
-2
-3
-4
-5
I
CE
, PEAK COLLECTOR-EMITTER CURRENT (A)
V
CE
= -350V, V
GE
= -15V
V
CE
= -200V, V
GE
= -15V
FIG. 17, CIRCUIT 1
R
GE
=
50
R
GE
= 25
T
J
= +150
o
C, V
CE
= -350V, V
GE
= -15V, L = 100
μ
H
FIG. 17, CIRCUIT 1
0.1
0.5
1.0
t
D
,
μ
s
-1
-2
-3
-4
-5
I
CE
, PEAK COLLECTOR-EMITTER CURRENT (A)
f
MAX2
= (P
D
- P
C
)/E
OFF
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 1.9
C/W
f
MAX1
= 0.05/
t
D(OFF)I
T
J
= +150
o
C, T
C
= +75
o
C, V
GE
= -15V, R
GE
= 25
, L = 100
μ
H
f
M
,
10
100
50
-1
-5
-10
I
CE
, PEAK COLLECTOR-EMITTER CURRENT (A)
FIG. 17, CIRCUIT 1
V
CE
= -350V
V
CE
= -200V
V
CE
= -350V
FIG. 17, CIRCUIT 1
T
J
= +150
o
C, V
GE
= -15V, R
G
= 25
, L = 100
μ
H
1
2
3
4
5
t
F
,
μ
s
-1
-3
-4
-5
-2
I
CE
, COLLECTOR-EMITTER CURRENT (A)
FIG. 17, CIRCUIT 2
V
CE
= -350V
T
J
= 25
o
C, V
GE
= -15V, R
G
= 25
, L = 100
μ
H
I
C
,
0
-10
-15
-20
-25
-5
C1, SNUBBER CAPACITANCE (
μ
F)
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
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