- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370579 > HGTD3N60C3 (Harris Corporation) 6A, 600V, UFS Series N-Channel IGBTs PDF資料下載
參數(shù)資料
| 型號(hào)： | HGTD3N60C3 |
| 廠商： | Harris Corporation |
| 英文描述： | 6A, 600V, UFS Series N-Channel IGBTs |
| 中文描述： | 第6A，600V的，的ufs系列N溝道IGBT的 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 227K |
| 代理商： | HGTD3N60C3 |
3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
8
10
12
0
2
4
8
10
12
14
14
6
16
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
4
18
20
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, T
C
= 25
o
C
2
4
6
8
10
12V
V
GE
= 15V
0
2
4
8
10
12
14
6
16
18
20
10V
8.0V
7.5V
7.0V
9.0V
8.5V
I
C
,
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
0
2
4
8
10
12
14
6
16
18
20
I
C
,
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= -40
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
0
2
4
8
10
12
14
6
16
18
20
T
C
= 25
o
C
25
50
75
100
125
150
0
1
2
3
4
5
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
7
6
I
S
,
0
20
30
50
t
S
,
μ
S
10
11
V
GE
, GATE TO EMITTER VOLTAGE (V)
12
14
15
13
60
40
10
I
SC
t
SC
0
4
10
14
V
CE
= 360V, R
GE
= 82
, T
J
= 125
o
C
2
6
8
12
70
HGTD3N60C3, HGTD3N60C3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTD3N60C3S | 6A, 600V, UFS Series N-Channel IGBTs |
| HGTD3N60A4 | 600V, SMPS Series N-Channel IGBT |
| HGTD3N60A4S | OSCILLATORS 100PPM 0+70 3.3V 4 4.000MHZ TS HCMOS 5X7MM 4PAD SMD |
| HGTG12N60C3D | 36 MACROCELL 3.3 VOLT ISP CPLD |
| HGTG12N60C3D | 24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD3N60C3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD3N60C3S9A | 功能描述:IGBT 晶體管 6a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD6N40E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD6N40E1S | 制造商:Harris Corporation 功能描述: |
| HGTD6N50E1 | 制造商:Harris Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。