參數(shù)資料
型號(hào)： HGTD3N60B3S
廠商： INTERSIL CORP
元件分類(lèi)： IGBT 晶體管
英文描述： 7A, 600V, UFS Series N-Channel IGBTs
中文描述： 7 A, 600 V, N-CHANNEL IGBT, TO-252AA
文件頁(yè)數(shù)： 5/7頁(yè)
文件大?。?/td> 141K
代理商： HGTD3N60B3S
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORM
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2
t
d
,
4
6
8
1
100
150
175
250
225
R
G
= 82
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V
7
5
3
75
125
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
2
4
6
8
1
60
80
100
120
140
R
G
= 82
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V OR 15V
T
J
= 25
o
C, V
GE
= 10V OR 15V
7
5
3
I
C
,
0
5
10
15
20
25
5
7
8
9
10
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
T
C
= 25
o
C
PULSE DURATION = 250
μ
s
11
12
13
14
15
30
T
C
= -55
o
C
Q
g
, GATE CHARGE (nC)
20
0
12
15
9
6
3
0
10
5
15
25
V
G
,
I
g(REF)
= 1mA, R
L
= 171
, T
C
= 25
o
C
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
100
C
C
IES
C
OES
FREQUENCY = 1MHz
200
300
400
500
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
相關(guān)PDF資料
PDF描述
HGT1S3N60B3S 7A, 600V, UFS Series N-Channel IGBTs
HGTD3N60C3S 6A, 600V, UFS Series N-Channel IGBTs
HGTP3N60C3 6A, 600V, UFS Series N-Channel IGBTs(6A, 600V, UFS系列N溝道絕緣柵雙極型晶體管)
HGTD3N60C3S9A 6A, 600V, UFS Series N-Channel IGBTs
HGTD3N60C3S 6A, 600V, UFS Series N-Channel IGBTs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTD3N60B3S9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
HGTD3N60C3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTD3N60C3S 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTD3N60C3S9A 功能描述:IGBT 晶體管 6a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTD6N40E1 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
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