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參數(shù)資料
| 型號： | HGTD3N60B3S |
| 廠商： | INTERSIL CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 7A, 600V, UFS Series N-Channel IGBTs |
| 中文描述： | 7 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 141K |
| 代理商： | HGTD3N60B3S |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 1mH
Test Circuit (Figure 17)
-
16
-
ns
Current Rise Time
t
rI
-
18
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
220
295
ns
Current Fall Time
t
fI
-
115
175
ns
Turn-On Energy
E
ON
-
130
140
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
210
325
μ
J
Thermal Resistance Junction To Case
R
θ
JC
-
-
3.75
o
C/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
25
50
75
100
125
150
1
0
3
5
2
4
6
7
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
10
700
6
0
I
C
,
2
4
300
400
200
100
500
600
8
0
12
14
16
18
20
T
J
= 150
o
C, R
G
= 82
, V
GE
= 15V, L = 500
μ
H
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
2
4
6
1
100
8
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
R
JC
= 3.75
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE
= 480V
3
5
7
200
T
C
75
o
C
75
o
C
V
GE
15V
10V
110
o
C
10V
15V
110
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
13
14
15
4
6
8
10
14
16
12
15
20
25
30
35
40
45
t
SC
I
SC
V
CE
= 360V, R
G
= 82
, T
J
= 125
o
C
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
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| HGT1S3N60B3S | 7A, 600V, UFS Series N-Channel IGBTs |
| HGTD3N60C3S | 6A, 600V, UFS Series N-Channel IGBTs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD3N60B3S9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTD3N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD3N60C3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD3N60C3S9A | 功能描述:IGBT 晶體管 6a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD6N40E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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