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參數(shù)資料
| 型號(hào)： | HGTD3N60A4S |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT |
| 中文描述： | 17 A, 600 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 156K |
| 代理商： | HGTD3N60A4S |
6
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
20
40
60
80
100
0
200
400
500
700
300
600
100
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
2.0
10
12
2.1
2.4
2.2
14
16
2.6
2.7
V
C
,
2.3
2.5
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250
μ
s,
I
CE
= 4.5A
I
CE
= 1.5A
I
CE
= 3A
t
1
, RECTANGULAR PULSE DURATION (s)
Z
q
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
t
1
t
2
P
D
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
qJC
X R
qJC
) + T
C
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGT1S3N60A4S | 600V, SMPS Series N-Channel IGBT |
| HGTP3N60B3 | 7A, 600V, UFS Series N-Channel IGBTs |
| HGTP3N60A4 | 600V, SMPS Series N-Channel IGBT |
| HGTP3N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTP3N60C3 | 72 MACROCELL 3.3 VOLT ISP CPLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD3N60A4S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA |
| hgtd3n60b3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD3N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD3N60B3S9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTD3N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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