參數(shù)資料
型號: HGTD3N60A4S
廠商: INTERSIL CORP
元件分類: IGBT 晶體管
英文描述: 600V, SMPS Series N-Channel IGBT
中文描述: 17 A, 600 V, N-CHANNEL IGBT, TO-252AA
文件頁數(shù): 4/10頁
文件大?。?/td> 156K
代理商: HGTD3N60A4S
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
2
3
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
4
8
4
5
16
12
20
1
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
4
8
16
12
20
0
2
3
4
1
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
E
O
,
μ
J
160
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
120
40
200
3
2
4
5
6
01
240
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
120
E
O
,
μ
J
0
20
80
40
100
140
60
3
2
4
5
6
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
0
12
16
2
1
1
3
4
5
6
8
4
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
4
8
20
16
12
24
32
28
3
2
4
5
6
1
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
R
G
= 50
, L = 1mH, V
CE
= 390V
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 12V
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
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參數(shù)描述
HGTD3N60A4S9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA
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