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參數(shù)資料
| 型號： | HGTD2N120CNS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 13A, 1200V, NPT Series N-Channel IGBT |
| 中文描述： | 13 A, 1200 V, N-CHANNEL IGBT, TO-252AA |
| 文件頁數(shù)： | 6/7頁 |
| 文件大小： | 89K |
| 代理商： | HGTD2N120CNS |
6
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
0.5
C
IES
C
OES
1.0
C
RES
FREQUENCY = 1MHz
C
1.5
2.0
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1
2
3
4
5
V
GE
= 10V
V
GE
= 15V
DUTY CYCLE <0.5%, T
C
= 110
o
C
250
μ
s PULSE TEST
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
t
1
t
2
P
D
R
G
= 51
L = 5mH
V
DD
= 960V
+
-
RHRD4120
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD2N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 13A I(C) | TO-252AA |
| HGTD3M60C3 | 制造商:Harris Corporation 功能描述: |
| HGTD3N60A4 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT |
| HGTD3N60A4S | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD3N60A4S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA |
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