參數(shù)資料
型號: HGTD2N120CNS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 13A, 1200V, NPT Series N-Channel IGBT
中文描述: 13 A, 1200 V, N-CHANNEL IGBT, TO-252AA
文件頁數(shù): 3/7頁
文件大小: 89K
代理商: HGTD2N120CNS
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 2.6A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 51
L = 5mH
Test Circuit (Figure 18)
-
25
30
ns
Current Rise Time
t
rI
-
11
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
205
220
ns
Current Fall Time
t
fI
-
260
320
ns
Turn-On Energy (Note 4)
E
ON1
-
96
-
μ
J
Turn-On Energy (Note 4)
E
ON2
-
425
590
μ
J
Turn-Off Energy (Note 5)
E
OFF
-
355
390
μ
J
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C,
I
CE
= 2.6A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 51
,
L = 5mH,
Test Circuit (Figure 18)
-
21
25
ns
Current Rise Time
t
rI
-
15
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
225
240
ns
Current Fall Time
t
fI
-
360
420
ns
Turn-On Energy (Note 4)
E
ON1
-
96
-
μ
J
Turn-On Energy (Note 4)
E
ON2
-
800
1100
μ
J
Turn-Off Energy (Note 5)
E
OFF
-
530
580
μ
J
Thermal Resistance Junction To Case
R
θ
JC
-
-
1.20
o
C/W
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 18.
5. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
0
25
75
100
125
150
2
10
V
GE
= 15V
12
14
8
6
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
10
0
I
C
,
4
6
600
800
400
200
1000
1200
0
12
14
8
2
T
J
= 150
o
C, R
G
= 51
, V
GE
= 15V, L = 5mH
16
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
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