參數(shù)資料
型號(hào): HGTD1N120BNS9A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA
中文描述: 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
文件頁數(shù): 6/7頁
文件大?。?/td> 71K
代理商: HGTD1N120BNS9A
6
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
Typical Performance Curves
(Unless Otherwise Specified)
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
50
C
100
150
250
300
200
350
C
IES
C
OES
C
RES
FREQUENCY = 1MHz
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
4
0
2
0
4
10
2
6
6
8
1
3
5
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, T
C
= 110
o
C
V
GE
= 12V
V
GE
= 10V
V
GE
= 15V
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
0.005
0.01
1.0
10
-3
10
-2
10
-1
10
0
10
-4
10
-5
2.0
0.1
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.1
0.01
0.02
0.5
0.05
0.2
R
G
= 82
L = 4mH
V
DD
= 960V
+
-
RHRD4120
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
I
CE
HGTD1N120BNS, HGTP1N120BN
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