參數(shù)資料
型號: HGTD1N120BNS9A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA
中文描述: 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
文件頁數(shù): 4/7頁
文件大?。?/td> 71K
代理商: HGTD1N120BNS9A
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
(Unless Otherwise Specified)
(Continued)
f
M
,
0.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
10
2.0
1.0
100
3.0
200
300
T
C
V
GE
15V
110
o
C 13V
15V
75
o
75
o
C
110
o
C
T
J
= 150
o
C, R
G
= 82
, L = 4mH, V
CE
= 960V
T
C
= 75
o
C, VGE = 15V
IDEAL DIODE
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 2.1
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
13
14
14.5
15
10
12
16
20
18
13.5
14
10
12
16
20
18
14
V
CE
= 840V, R
G
= 82
, T
J
= 125
o
C
t
SC
I
SC
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
4
6
6
8
10
1
3
5
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 13V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -55
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2
3
4
0
2
4
6
8
10
1
6
0
5
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
E
O
,
1000
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
800
400
200
1.5
1
2
0.5
1200
2.5
0
3
R
G
= 82
, L = 4mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 13V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 13V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
1
1.5
2
0.5
50
150
100
200
250
2.5
3
T
J
= 150
o
C, V
GE
= 13V OR 15V
T
J
= 25
o
C, V
GE
= 13V OR 15V
R
G
= 82
, L = 4mH, V
CE
= 960V
HGTD1N120BNS, HGTP1N120BN
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