參數(shù)資料
型號: HGT1Y40N60B3D
英文描述: TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264
中文描述: 晶體管| IGBT的|正陳| 600V的五(巴西)國際消費電子展| 40A條一(c)|至264
文件頁數(shù): 1/9頁
文件大?。?/td> 163K
代理商: HGT1Y40N60B3D
2001 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B
HGT1Y40N60B3D
70A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
The HGT1Y40N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C. The
IGBT used is the development type TA49052. The diode
used in anti-parallel with the IGBT is the development type
TA49063.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49365.
Symbol
Features
70A, 600V, T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . 100ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Packaging
JEDEC STYLE TO-264
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1Y40N60B3D
TO-264
G40N60B3D
NOTE: When ordering, use the entire part number.
C
E
G
E
C
G
COLLECTOR
(FLANGE)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
December 2001
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