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參數(shù)資料
| 型號： | HGT1S7N60C3DS |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBTs(14A, 600V, UFS系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 8/9頁 |
| 文件大小： | 216K |
| 代理商： | HGT1S7N60C3DS |
8
HGTP7N60C3D, HGT1S7N60C3DS
TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
TO-263AB
24mm TAPE AND REEL
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
E
A
1
A
H
1
D
L
b
e
e1
L
2
b
1
L
1
c
TERM. 4
1
3
1
3
L
3
b
2
TERM. 4
0.450
(11.43)
0.350
(8.89)
0.150
(3.81)
0.080 TYP (2.03)
0.062 TYP (1.58)
0.700
(17.78)
J
1
SYMBOL
A
A
1
b
b
1
b
2
c
D
E
e
e
1
H
1
J
1
L
L
1
L
2
L
3
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-263AB outline dated 2-92.
2. L
3
and b
2
dimensions established a minimum mounting surface
for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L
1
is the terminal length for soldering.
7. Positionofleadtobemeasured0.120inches(3.05mm)frombottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 10 dated 5-99.
INCHES
MIN
0.170
0.048
0.030
0.045
0.310
0.018
0.405
0.395
0.100 TYP
0.200 BSC
0.045
0.095
0.175
0.090
0.050
0.315
MILLIMETERS
MIN
4.32
1.22
0.77
1.15
7.88
0.46
10.29
10.04
2.54 TYP
5.08 BSC
1.15
2.42
4.45
2.29
1.27
8.01
NOTES
-
4, 5
4, 5
4, 5
2
4, 5
-
-
7
7
-
-
-
4, 6
3
2
MAX
0.180
0.052
0.034
0.055
-
0.022
0.425
0.405
MAX
4.57
1.32
0.86
1.39
-
0.55
10.79
10.28
0.055
0.105
0.195
0.110
0.070
-
1.39
2.66
4.95
2.79
1.77
-
2.0mm
4.0mm
1.75mm
1.5mm
DIA. HOLE
C
USER DIRECTION OF FEED
16mm
24mm
330mm
100mm
13mm
30.4mm
24.4mm
COVER TAPE
GENERAL INFORMATION
1. 800 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
ACCESS HOLE
40mm MIN.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| HGT1S7N60C3DS9A | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1Y40N60B3D | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGT1Y40N60C3D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264 |
| HGT4E20N60A4DS | 功能描述:IGBT 晶體管 TO-268 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT4E30N60B3DS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT |
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