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參數(shù)資料
| 型號(hào)： | HGT1S7N60B3DS |
| 廠(chǎng)商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | HGT1S7N60B3DS |
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
10
5
1
9
11
15
20
30
40
50
60
3
7
13
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 15V
R
G
= 50
, L = 2mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
1
20
60
40
100
0
5
9
13
15
3
7
11
120
140
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 10V
R
G
= 50
, L = 2mH, V
CE
= 480V
T
J
= 25
o
C and 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
t
d
,
5
9
13
15
100
150
200
250
50
3
7
11
R
G
= 50
, L = 2mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
1
5
9
13
15
80
120
100
3
7
11
40
60
R
G
= 50
, L = 2mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V and 15V
T
J
= 25
o
C, V
GE
= 10V and 15V
I
C
,
0
16
24
32
8
14
6
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
40
10
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
PULSE DURATION = 250
μ
s
V
CE
= 10V
DUTY CYCLE = < 0.5%
Q
G
, GATE CHARGE (nC)
20
0
12
15
9
6
3
0
12
8
16
28
V
G
,
24
4
I
g(REF)
= 0.758mA, R
L
= 86
,
T
C
= 25
o
C
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
HGTP7N60B3D, HGT1S7N60B3DS
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| HGT1S7N60B3DS | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| HGTD2N120CNS | 13A, 1200V, NPT Series N-Channel IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S7N60B3DS9A | 功能描述:IGBT 晶體管 14A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60B3S | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:14A, 600V, UFS Series N-Channel IGBTs |
| HGT1S7N60B3S9A | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB |
| HGT1S7N60C3D | 功能描述:IGBT 晶體管 Optocoupler Phototransistor RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60C3DS | 功能描述:IGBT 晶體管 7A 600V TF=275NS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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