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參數(shù)資料
| 型號： | HGT1S7N60B3DS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 94K |
| 代理商： | HGT1S7N60B3DS |
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (V)
10
5
10
1
100
15
4
6
8
3
2
400
T
J
= 150
o
C, R
G
= 50
, L = 2mH, V
CE
= 480V
T
C
V
GE
110
o
C 10V
110
o
C 15V
10V
75
o
C
15V
75
o
C
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
R
θ
JC
= 2.1
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
13
14
15
20
40
60
80
100
2
6
10
14
18
V
CE
= 360V, R
G
= 50
, T
J
= 125
o
C
I
SC
t
SC
0
2
4
6
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
20
30
1
3
5
7
5
15
25
DUTY CYCLE < 0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
PULSE DURATION = 250
μ
s
0
4
6
8
2
3
5
7
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
20
40
30
1
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -55
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
E
O
,
μ
J
1200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
15
1600
800
400
0
9
5
1
3
7
11
13
T
J
= 25
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V
R
G
= 50
, L = 2mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
15
800
0
11
9
5
1
200
600
1000
3
7
13
400
T
J
= 150
o
C, V
GE
= 10V and 15V
R
G
= 50
, L = 2mH, V
CE
= 480V
T
J
= 25
o
C, V
GE
= 10V and 15V
HGTP7N60B3D, HGT1S7N60B3DS
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| HGT1S7N60B3DS | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S7N60B3DS9A | 功能描述:IGBT 晶體管 14A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60B3S | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:14A, 600V, UFS Series N-Channel IGBTs |
| HGT1S7N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB |
| HGT1S7N60C3D | 功能描述:IGBT 晶體管 Optocoupler Phototransistor RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S7N60C3DS | 功能描述:IGBT 晶體管 7A 600V TF=275NS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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