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參數(shù)資料
| 型號(hào)： | HGT1S3N60A4DS9A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 17 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 130K |
| 代理商： | HGT1S3N60A4DS9A |
7
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 25. SWITCHING TEST WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
400
800
t
r
,
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
200
600
6
22
10
14
18
26
1000
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
I
EC
= 3A, V
CE
= 390V
160
80
40
0
Q
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
1000
200
400
200
600
800
120
125
o
C, I
EC
= 3A
125
o
C, I
EC
= 1.5A
25
o
C, I
EC
= 20A
25
o
C, I
EC
= 10A
V
CE
= 390V
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
R
G
= 50
L = 1mH
V
DD
= 390V
+
-
HGTP3N60A4D
DIODE TA49369
DUT
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
I
CE
E
OFF
E
0N2
HGT1S3N60A4DS, HGTP3N60A4D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S3N60A4S | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:600V, SMPS Series N-Channel IGBT |
| HGT1S3N60A4S9A | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S3N60B3DS | 制造商:Harris Corporation 功能描述: |
| HGT1S3N60B3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB |
| HGT1S3N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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