參數(shù)資料
型號: HGT1S3N60A4DS9A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
中文描述: 17 A, 600 V, N-CHANNEL IGBT, TO-263AB
文件頁數(shù): 6/10頁
文件大?。?/td> 130K
代理商: HGT1S3N60A4DS9A
6
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
50
100
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
150
125
25
150
250
200
E
T
,
μ
J
I
CE
= 4.5A
I
CE
= 3A
I
CE
= 1.5A
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 50
, L = 1mH, V
CE
= 390V, V
GE
= 15V
30
10
100
R
G
, GATE RESISTANCE (
)
100
3
1000
E
T
,
μ
J
1000
I
CE
= 4.5A
I
CE
= 3A
I
CE
= 1.5A
T
J
= 125
o
C, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
20
40
60
80
100
0
200
400
500
700
300
600
100
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
V
GE
, GATE TO EMITTER VOLTAGE (V)
8
2.0
10
12
2.1
2.4
2.2
14
16
2.6
2.7
V
C
,
2.3
2.5
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250
μ
s
I
CE
= 4.5A
I
CE
= 1.5A
I
CE
= 3A
1
2
4
5
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
3
0
8
12
16
20
4
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
25
o
C
125
o
C
48
32
16
0
t
r
,
I
EC
, FORWARD CURRENT (A)
1
64
40
24
8
2
3
5
6
56
4
125
o
C t
rr
dI
EC
/dt = 200A/
μ
s
25
o
C t
rr
25
o
C t
a
25
o
C t
b
125
o
C t
a
125
o
C t
b
HGT1S3N60A4DS, HGTP3N60A4D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S3N60A4S 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:600V, SMPS Series N-Channel IGBT
HGT1S3N60A4S9A 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S3N60B3DS 制造商:Harris Corporation 功能描述:
HGT1S3N60B3DS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB
HGT1S3N60B3S 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: