參數(shù)資料
型號： HGT1S20N35G3VLS
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
中文描述： 20 A, 320 V, N-CHANNEL IGBT, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁數(shù)： 4/6頁
文件大小： 106K
代理商： HGT1S20N35G3VLS
3-69
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF CASE TEMPERATURE
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING
ENERGY AS A FUNCTION OF INDUCTANCE
Typical Performance Curves
(Continued)
+25
+50
+75
+100
+125
+150
25
20
15
10
5
0
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
+175
V
GE
= 5.0V
PACKAGE LIMITED
-25
+75
+125
+175
1.2
1.0
T
J
, JUNCTION TEMPERATURE (
o
C)
+25
V
T
,
1.1
0.9
0.7
0.6
0.8
0.5
I
CE
= 1mA
T
J
, JUNCTION TEMPERATURE (
o
C)
L
+25
+50
+75
+100
+125
+150
+175
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
V
ECS
= 20V
V
CES
= 250V
T
J
, JUNCTION TEMPERATURE (
o
C)
+175
+150
+125
+100
+75
+50
+25
10
12
14
16
18
t
(
,
V
CL
= 300V, R
GE
= 25
, V
GE
= 5V, L= 550 H
I
CE
= 6A, R
L
= 50
I
CE
=15A, R
L
= 20
I
CE
=10A, R
L
= 30
INDUCTANCE (mH)
0
2
4
6
8
10
40
30
20
10
5
I
C
,
35
25
15
V
GE
= 5V
+25
o
C
+175
o
C
45
0
2
4
6
8
10
400
600
800
1000
INDUCTANCE (mH)
E
A
,
+25
o
C
+175
o
C
V
GE
= 5V
200
1200
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S20N35G3VLS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB
HGT1S20N36G3VL 功能描述:IGBT 晶體管 20A 360V Clamp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S20N36G3VLS 功能描述:IGBT 晶體管 20A 360V Clamp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S20N60A4S9A 功能描述:IGBT 晶體管 600V SMPS SERIES NCH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S20N60B3S 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
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