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參數(shù)資料
| 型號： | HGT1S20N35G3VLS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs |
| 中文描述： | 20 A, 320 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 106K |
| 代理商： | HGT1S20N35G3VLS |
3-67
Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 10mA,
V
GE
= 0V
T
C
= +175
o
C
310
345
380
V
T
C
= +25
o
C
320
350
380
V
T
C
= -40
o
C
320
355
390
V
Collector-Emitter Breakdown Voltage
BV
CER
I
C
= 10mA
V
GE
= 0V
R
GE
= 1k
T
C
= +175
o
C
300
340
375
V
T
C
= +25
o
C
315
345
375
V
T
C
= -40
o
C
315
350
390
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 10A
V
CE
= 12V
T
C
= +25
o
C
-
3.7
-
V
Gate Charge
Q
G(ON)
I
C
= 10A
V
GE
= 5V
V
CE
= 12V
T
C
= +25
o
C
-
28.7
-
nC
Collector-Emitter Clamp Bkdn. Voltage
BV
CE(CL)
I
C
= 10A
R
G
= 0
T
C
= +175
o
C
325
360
395
V
Emitter-Collector Breakdown Voltage
BV
ECS
I
C
= 10mA
T
C
= +25
o
C
20
32
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= 250V
T
C
= +25
o
C
-
-
5
μ
A
V
CE
= 250V
T
C
= +175
o
C
-
-
250
μ
A
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= 10A
V
GE
= 4.5V
T
C
= +25
o
C
-
1.3
1.6
V
T
C
= +175
o
C
-
1.25
1.5
V
I
C
= 20A
V
GE
= 5.0V
T
C
= +25
o
C
-
1.6
2.8
V
T
C
= +175
o
C
-
1.9
3.5
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 1mA
V
CE
= V
GE
T
C
= +25
o
C
1.3
1.8
2.3
V
Gate Series Resistance
R
1
T
C
= +25
o
C
-
1.0
-
k
Gate-Emitter Resistance
R
2
T
C
= +25
o
C
10
17
25
k
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
10V
±
400
±
590
±
1000
μ
A
Gate-Emitter Breakdown Voltage
BV
GES
I
GES
=
±
2mA
±
12
±
14
-
V
Current Turn-Off Time-Inductive Load
t
D(OFF)I
+
t
F(OFF)I
I
C
= 10A, R
G
= 25
,
L = 550 H, R
L
= 26.4
, V
GE
= 5V,
V
CL
= 300V, T
C
= +175
o
C
-
15
30
μ
s
Inductive Use Test
I
SCIS
L = 2.3mH,
V
G
= 5V,
R
G
= 0
T
C
= +175
o
C
18
-
-
A
T
C
= +25
o
C
26
-
-
A
Thermal Resistance
R
θ
JC
-
-
1.0
o
C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S20N35G3VLS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB |
| HGT1S20N36G3VL | 功能描述:IGBT 晶體管 20A 360V Clamp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S20N36G3VLS | 功能描述:IGBT 晶體管 20A 360V Clamp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S20N60A4S9A | 功能描述:IGBT 晶體管 600V SMPS SERIES NCH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S20N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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