參數(shù)資料
型號: HGT1S15N120C3S
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 35A, 1200V, UFS Series N-Channel IGBTs
中文描述: 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
文件頁數(shù): 8/11頁
文件大小: 139K
代理商: HGT1S15N120C3S
8
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
TO-220AB
(Alternate Version)
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
LEAD NO. 1
-
GATE
LEAD NO. 2
-
COLLECTOR
LEAD NO. 3
-
EMITTER
TERM. 4
-
COLLECTOR
E
P
D
L
L
1
60
o
b
1
b
e
e
1
H
1
1
J
1
2
3
TERM. 4
Q
c
A
1
A
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.170
0.180
4.32
4.57
-
A
1
b
0.048
0.052
1.22
1.32
2, 4
0.030
0.034
0.77
0.86
2, 4
b
1
c
0.045
0.055
1.15
1.39
2, 4
0.018
0.022
0.46
0.55
2, 4
D
0.590
0.610
14.99
15.49
-
E
0.395
0.405
10.04
10.28
-
e
0.100 TYP
2.54 TYP
5
e
1
H
1
J
1
L
0.200 BSC
5.08 BSC
5
0.235
0.255
5.97
6.47
-
0.095
0.105
2.42
2.66
6
0.530
0.550
13.47
13.97
-
L
1
P
0.110
0.130
2.80
3.30
3
0.149
0.153
3.79
3.88
-
Q
0.105
0.115
2.66
2.92
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Dimension (without solder).
3. Solder finish uncontrolled in this area.
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 2 dated 10-95.
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