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參數(shù)資料
| 型號： | HGT1S15N120C3S |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 35A, 1200V, UFS Series N-Channel IGBTs |
| 中文描述： | 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 139K |
| 代理商： | HGT1S15N120C3S |
5
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR
TO EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
5
10
20
25
10
1
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 0.76
o
C/W
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
V
GE
= 15V
20
30
100
V
GE
= 10V
T
J
= 150
o
C, T
C
= 75
o
C, R
G
= 10
L = 1mH, V
CE(PK)
= 960V
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
200
400
600
800
1000
1200
0
10
20
30
40
50
T
J
= 150
o
C, V
GE
= 15V, R
G
= 10
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
500
1000
1500
2000
2500
C
C
IES
C
OES
3000
3500
4000
FREQUENCY = 1MHz
V
G
,
12
8
6
2
0
40
80
160
120
14
4
10
0
V
CE
= 400V
V
CE
= 1200V
V
CE
= 800V
I
G(REF)
= 4.21mA, R
L
= 80
, T
C
= 25
o
C
Q
g
, GATE CHARGE (nC)
t
1
, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
SINGLE PULSE
Z
θ
J
,
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
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相關(guān)代理商/技術(shù)參數(shù) |
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| HGT1S1N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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| HGT1S1N120CNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB |
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