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參數(shù)資料
| 型號(hào)： | HFB35HB20PBF |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 35 A, SILICON, RECTIFIER DIODE, TO-254AA |
| 封裝： | HERMETIC SEALED PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | HFB35HB20PBF |
www.irf.com
3
HFB35HB20
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
Fig. 2 - Typical Reverse Current Vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Vs.
Instantaneous Forward Current
0
40
80
120
160
200
Reverse Voltage - VR (V)
100
1000
10000
Ju
nc
tio
n
C
ap
ac
ita
nc
e
-
C
T
(p
F
)
TJ = 25°C
0
40
80
120
160
200
Reverse Voltage - V R (V)
0.001
0.01
0.1
1
10
100
R
ev
er
se
C
ur
re
nt
-
I
R
(
A
)
125°C
75°C
25°C
100°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Forward Voltage Drop - V F (V)
1
10
100
In
st
an
ta
ne
ou
s
F
or
w
ar
d
C
ur
re
nt
-
I
F
(A
)
Tj = -55°C
Tj = 125°C
Tj = 25°C
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
mal
R
es
pons
e
(Z
)
1
th
JC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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