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參數(shù)資料
| 型號(hào)： | HFB35HB20PBF |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 35 A, SILICON, RECTIFIER DIODE, TO-254AA |
| 封裝： | HERMETIC SEALED PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 170K |
| 代理商： | HFB35HB20PBF |
2
www.irf.com
HFB35HB20
See Fig. 2
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
Cathode Anode Breakdown Voltage
200
—
V
IR = 100A
VF
Forward Voltage
—
1.25
IF = 20A, TJ =-55°C
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LS
Series Inductance
—
7.8
—
nH
Measured from anode lead to cathode
lead , 6mm ( 0.025 in) from package
CT
Junction Capacitance, See Fig. 3
—
175
pF
VR = 200V
IR
Reverse Leakage Current
—
10
A
VR = VR Rated
See Fig. 2
—
1.0
mA
VR = VR Rated, TJ = 125°C
A/s
nC
A
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
A/s
nC
A
Parameter
Min. Typ. Max. Units
Test Conditions
trr
Reverse Recovery Time
—
35
ns
IF = 1.0A,VR = 30V, dif/dt = 200A/s
trr1
Reverse Recovery Time
—
45
—
ns
TJ = 25°C
See Fig.
trr2
—
68
—
TJ = 125°C
5
IF = 35A
IRRM1
Peak Recovery Current
—
3.3
—
TJ = 25°C
See Fig.
IRRM2
—
7.6
—
TJ = 125°C
6
VR = 160V
Qrr1
Reverse Recovery Charge
—
76
—
TJ = 25°C
See Fig.
Qrr2
—
270
—
TJ = 125°C
7
dif/dt = 200A/s
di(rec)M/dt1
Peak Rate of Fall of Recovery Current
—
236
—
TJ = 25°C
See Fig.
di(rec)M/dt2
During tb
—
1020
—
TJ = 125°C
8
Thermal - Mechanical Characteristics
Parameter
Typ.
Max.
Units
RthJC
Junction-to-Case
—
1.0
Wt
Weight
9.3
—
g
°C/W
See Fig. 1
—
1.15
IF = 20A, TJ = 25°C
—
1.41
IF = 35A, TJ = 25°C
—
1.92
IF = 70A, TJ = 25°C
—
1.01
IF = 20A, TJ =125°C
V
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