參數(shù)資料
型號: HEF4720BT
廠商: NXP SEMICONDUCTORS
元件分類: SRAM
英文描述: 256-bit, 1-bit per word random access memories
中文描述: 256 X 1 STANDARD SRAM, 580 ns, PDSO16
封裝: PLASTIC, SO-16
文件頁數(shù): 3/16頁
文件大?。?/td> 180K
代理商: HEF4720BT
January 1995
3
Philips Semiconductors
Product specification
256-bit, 1-bit per word random access memories
HEF4720B
HEF4720V
I
DD
LIMITS
See below.
FUNCTION TABLE
Notes
1.
H = HIGH state (the more positive voltage)
L = LOW state (the less positive voltage)
X = state is immaterial
Z = high impedance OFF-state
CS
W
O
O
MODE
L
H
data written
into memory
data written
into memory
Z
complement of data
written into memory
complement of data
written into memory
Z
write
L
L
read
H
X
inhibit
PINNING
CS
W
D
A
0
to A
7
O
O
chip select input (active LOW)
write enable input
data input
address inputs
3-state output (active HIGH)
3-state output (active LOW)
SUPPLY VOLTAGE
The values given at V
DD
= 15 V in the following DC and
AC characteristics, are not applicable to the HEF4720V,
because of its lower supply voltage range.
DC CHARACTERISTICS
V
SS
= 0 V
RATING
0,5 to 18
0,5 to 18
RECOMMENDED OPERATING
STAND-BY MIN.
HEF4720B
HEF4720V
3,0 to 15,0
4,5 to 12,5
3
3
V
V
V
DD
V
V
OL
V
SYMBOL
T
amb
(
°
C)
40
+
25
+
85
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Output current
LOW
4,75
10
15
5
10
15
0,4
0,5
1,5
2,4
4,8
10,0
2
4
1,6
3,2
7,5
mA
mA
mA
I
OL
10
Quiescent device
current
25
50
25
50
200
μ
A
400
μ
A
800
μ
A
I
DD
100
100
Input leakage current
HEF4720V
HEF4720B
10
15
±
I
IN
0,3
0,3
0,3
0,3
1
μ
A
1
μ
A
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