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參數(shù)資料
| 型號(hào)： | HDD32M72D9RPW-13B |
| 廠商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | DDR SDRAM Module 256Mbyte (32Mx72bit), based on 32Mx8, 4Banks 8K Ref., 184Pin-DIMM with PLL & Register |
| 中文描述： | 256MB的DDR SDRAM內(nèi)存模塊（32Mx72bit），基于對(duì)32Mx8，4Banks 8K的參考。，184Pin - DIMM內(nèi)存的鎖相環(huán) |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 418K |
| 代理商： | HDD32M72D9RPW-13B |
HANBit
HDD32M72D9RPW
URL : www.hbe.co.kr 4 HANBit Electronics Co.,Ltd.
REV 1.0 (JUNE.2003)
PIN FUNCTION DESCRIPTION
Pin
Name
Input Function
CK, /CK
Clock
CK and /CK are differential clock inputs. All address and control input signals are
sampled on the positive edge of CK and negative edge of CK. Output (read) data
is referenced to both edges of CK. Internal clock signals are derived from CK/CK.
CKE
Clock Enable
CKE HIGH activates, and CKE LOW deactivates internal clock signals, and
device input buffers and output drivers. Deactivating the clock provides
PRECHARGE
POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE
POWER-DOWN(row ACTIVE in any bank). CKE is synchronous for all functions
except for disabling outputs, which is achieved asynchronously. Input buffers,
excluding CK, CK and CKE are disabled during power-down and self refresh
modes, providing low standby power. CKE will recognizean LVCMOS LOW level
prior to VREF being stable on power-up.
/CS
Chip Select
/CS enables(registered LOW) and disables(registered HIGH) the command
decoder.
All commands are masked when /CS is registered HIGH. /CS provides for external
bank selection on systems with multiple banks. /CS is considered part of the
command code.
A0 ~ A12
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA12, Column address : CA0 ~ CA9
BA0 ~ BA1 Bank select address
BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRE-CHARGE
command is being applied.
/RAS
Row address strobe
Latches row addresses on the positive going edge of the CLK with /RAS low.
Enables row access & precharge.
/CAS
Columnaddress strobe
Latches column addresses on the positive going edge of the CLK with /CAS low.
Enables column access.
/WE
Write enable
Enables write operation and row precharge.
Latches data in starting from /CAS, /WE active.
DQS0 ~ 7
Data Strobe
Output with read data, input with write data. Edge-aligned with read data, cen-
tered in write data. Used to capture write data.
DM0~7
Input Data Mask
DM is an input mask signal for write data. Input data is masked when DM is
sampled HIGH along with that input data during a WRITE access. DM is sampled
on both edges of DQS. DM pins include dummy loading internally, to matches the
DQ and DQS load-ing.
DQ0 ~ 63
Data input/output
Data inputs/outputs are multiplexed on the same pins.
WP
Write Protection
WP pin is connected to Vcc.
When WP is
“
high
”
, EEPROM Programming will be inhibited and the entire
memory will be write-protected.
VDDQ
Supply
DQ Power Supply : +2.5V
±
0.2V.
VDD
Supply
Power Supply : +2.5V
±
0.2V (device specific).
VSS
Supply
DQ Ground.
VREF
Supply
SSTL_2 reference voltage.
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