參數(shù)資料
型號(hào): HCTS30MS
廠商: Intersil Corporation
英文描述: Radiation Hardened 8-Input NAND Gate
中文描述: 輻射加固8輸入與非門(mén)
文件頁(yè)數(shù): 1/10頁(yè)
文件大?。?/td> 134K
代理商: HCTS30MS
440
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCTS30DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
14 Lead SBDIP
HCTS30KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
14 Lead Ceramic Flatpack
HCTS30D/Sample
+25
o
C
Sample
14 Lead SBDIP
HCTS30K/Sample
+25
o
C
Sample
14 Lead Ceramic Flatpack
HCTS30HMSR
+25
o
C
Die
Die
HCTS30MS
Radiation Hardened
8-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14
TOP VIEW
A
B
C
D
E
F
GND
VCC
NC
H
G
NC
NC
Y
1
2
3
4
5
6
7
14
13
12
11
10
9
8
14
13
12
11
10
9
8
2
3
4
5
6
7
1
A
B
C
D
E
F
GND
VCC
NC
H
G
NC
NC
Y
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
Input Current Levels Ii
5
μ
A at VOL, VOH
Description
The Intersil HCTS30MS is a Radiation Hardened 8-Input
NAND Gate. A high on all input forces the output to a low
state.
The HCTS30MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
August 1995
Spec Number
518639
File Number
3056.1
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