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參數資料
| 型號： | HAT2167H-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場效應管電源開關 |
| 文件頁數： | 4/8頁 |
| 文件大小： | 94K |
| 代理商： | HAT2167H-EL-E |
HAT2167H
Rev.5.00 Sep 20, 2005 page 4 of 7
Case Temperature Tc (
°
C)
S
D
)
Static Drain to Source on State Resistance
vs. Temperature
F
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
Reverse Drain Current I
DR
(A)
R
Body-Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Drain Current I
D
(A)
S
Switching Characteristics
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
10
8
6
4
2
-25
0
25
50
75
100 125 150
0
ID
10 A, 20 A, 50 A
V
GS
= 4.5 V
10 V
Pulse Test
3
30
0.1
1
10
100
0.3
10
100
30
1
0.3
3
0.1
Tc = -25
°
C
V
DS
= 10 V
Pulse Test
75
°
C
25
°
C
10 A, 20 A
0.1
0.3
1
3
10
30
100
20
50
10
0
5
10
15
20
30
25
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
1000
300
100
30
10
1
0.1
3
di/dt = 100 A/
μ
s
V
GS
= 0, Ta = 25
°
C
0.3
1
3
10
30
100
100
50
40
30
20
10
0
20
16
12
8
4
20
40
60
80
100
0
0
I
D
= 30 A
V
GS
V
DS
V
DD
= 25 V
10 V
5 V
V
DD
= 25 V
10 V
5 V
V
GS
= 10 V, V
DS
= 10 V
Rg = 4.7
, duty
≤
1 %
tf
tr
td(off)
td(on)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HAT2167N | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2167N-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2168H | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 30A 5-Pin(4+Tab) LFPAK |
| HAT2168H_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2168H-E | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 30V 30A 5PIN LFPAK - Tape and Reel |
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