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參數(shù)資料
| 型號(hào)： | HAT2167H-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場(chǎng)效應(yīng)管電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 94K |
| 代理商： | HAT2167H-EL-E |
Rev.5.00 Sep 20, 2005 page 1 of 7
HAT2167H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0039-0500
Rev.5.00
Sep 20, 2005
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 4.2 m
typ. (at V
GS
= 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
1234
5
1, 2, 3 Source
4 Gate
5 Drain
G
D
S S S
1 2 3
4
5
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°
C/W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
Note 2
E
AR
Note 2
Pch
Note3
θ
ch-C
Tch
Tstg
Ratings
30
±20
40
160
40
20
40
20
6.25
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tch = 25
°
C, Rg
≥
50
3. Tc = 25
°
C
Note1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2167N | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2167N-EL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2168H | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 30A 5-Pin(4+Tab) LFPAK |
| HAT2168H_05 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2168H-E | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 30V 30A 5PIN LFPAK - Tape and Reel |
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