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參數(shù)資料
| 型號： | HAT2165H |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場效應(yīng)管電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 80K |
| 代理商： | HAT2165H |
HAT2165H
Rev.5.00, Apr.09.2003, page 3 of 10
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
± 20
—
—
V
I
G
= ±100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
± 10
μ
A
μ
A
V
m
m
S
V
GS
= ±16 V, V
DS
= 0
Zero gate voltage drain current
I
DSS
—
—
1
V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 27.5 A, V
GS
= 10 V
Note4
I
D
= 27.5 A, V
GS
= 4.5 V
Note4
I
D
= 27.5 A, V
DS
= 10 V
Note4
Static drain to source on state
R
DS(on)
—
2.5
3.3
resistance
R
DS(on)
—
3.4
5.3
Forward transfer admittance
|y
fs
|
60
100
—
Input capacitance
Ciss
—
5180
—
pF
V
DS
= 10 V
Output capacitance
Coss
—
1200
—
pF
V
GS
= 0
Reverse transfer capacitance
Crss
—
380
—
pF
nc
f = 1 MHz
Gate Resistance
Rg
—
0.5
—
Total gate charge
Qg
—
33
—
V
DD
= 10 V
Gate to source charge
Qgs
—
15
—
nc
V
GS
= 4.5 V
Gate to drain charge
Qgd
—
7.1
—
nc
I
D
= 55 A
Turn-on delay time
t
d(on)
—
13
—
ns
V
GS
= 10 V, I
D
= 27.5 A
V
DD
10 V
R
L
= 0.36
Rg = 4.7
IF = 55 A, V
GS
= 0
Note4
Rise time
t
r
—
65
—
ns
Turn-off delay time
t
d(off)
—
60
—
ns
Fall time
t
f
—
9.5
—
ns
Body–drain diode forward
voltage
V
DF
—
0.81
1.06
V
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
t
rr
—
40
—
ns
IF = 55 A, V
GS
= 0
diF/ dt = 100 A/ μs
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|---|---|
| HAT2165H_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2165H-E | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 30V 55A 5PIN LFPAK - Tape and Reel |
| HAT2165H-EL-E | 功能描述:MOSFET N-CH 30V 55A LFPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| HAT2165N | 功能描述:MOSFET N-CH 30V 55A LFPAKI RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| HAT2165N_08 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
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