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參數(shù)資料
| 型號： | HAT2164H |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場效應(yīng)管電源開關(guān) |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 80K |
| 代理商： | HAT2164H |
HAT2164H
Rev.4.00, Apr.09.2003, page 10 of 10
1. them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.
2. programs, algorithms, or circuit application examples contained in these materials.
3. materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers
contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed
4. (http://www.renesas.com).
as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage,
5. at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained
6. herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
imported into a country other than the approved destination.
8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Copyright 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.
Colophon 0.0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAT2165H | Silicon N Channel Power MOS FET Power Switching |
| HAT2165N | Silicon N Channel Power MOS FET Power Switching |
| HAT2166H | Silicon N Channel Power MOS FET Power Switching |
| HAT2167H | Silicon N Channel Power MOS FET Power Switching |
| HAT2167H-EL-E | Silicon N Channel Power MOS FET Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2164H_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2164H-EL-E | 功能描述:MOSFET N-CH 30V 60A 5LFPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| HAT2165H | 功能描述:MOSFET N-CH 30V 55A LFPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| HAT2165H_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
| HAT2165H-E | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 30V 55A 5PIN LFPAK - Tape and Reel |
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