參數(shù)資料
型號: HAT2080R
文件頁數(shù): 1/6頁
文件大?。?/td> 37K
代理商: HAT2080R
Application
Power switching
Features
Low on–resistance
Capable of2.5V gate drive
Low drive current
High density mounting
Ordering Information
————————————————————
Hitachi Code
————————————————————
EIAJ Code
————————————————————
JEDEC Code
————————————————————
FP–8D
SC–527–8A
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
GSS
———————————————————————————————————————————
Drain current
I
D
———————————————————————————————————————————
Drain peak current
I
D(pulse)
*
———————————————————————————————————————————
Body–drain diode reverse drain current
I
DR
———————————————————————————————————————————
Channel dissipation
Pch**
———————————————————————————————————————————
Channel temperature
Tch
———————————————————————————————————————————
Storage temperature
Tstg
———————————————————————————————————————————
*
PW
10 μs, duty cycle
1 %
**
When using the glass epoxy board (40
x
40
x
1.6 mm)
Symbol
Ratings
Unit
30
V
±10
V
5
A
20
A
5
A
1
W
150
°C
–55 to +150
°C
1234
5
6
7
8
SOP–8
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
G
D
S S S
1 2
D D D
4
3
5 6
7 8
HAT2001F
Silicon N Channel Power MOS FET
相關(guān)PDF資料
PDF描述
HAT2080T
HAT2083R TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | SO
HAT2083RJ TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | SO
HAT2085R
HAT2085T
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HAT2080R-EL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
HAT2080T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
HAT2080T-EL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
HAT2083R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | SO
HAT2083RJ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | SO